onsemi FGH60N60SMD, Type N-Channel IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

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Packaging Options:
RS Stock No.:
739-4945
Mfr. Part No.:
FGH60N60SMD
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

120A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

600W

Package Type

TO-247AB

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

Field Stop 2nd generation

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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