Fuji Electric 2MBi200U4H-120-50, M249 , N-Channel Series IGBT Module, 200 A max, 1200 V, Panel Mount
- RS Stock No.:
- 716-5567
- Mfr. Part No.:
- 2MBi200U4H-120-50
- Brand:
- Fuji Electric
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 716-5567
- Mfr. Part No.:
- 2MBi200U4H-120-50
- Brand:
- Fuji Electric
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji Electric | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1.04 kW | |
| Package Type | M249 | |
| Configuration | Series | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 108 x 62 x 30mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Fuji Electric | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.04 kW | ||
Package Type M249 | ||
Configuration Series | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 108 x 62 x 30mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.