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Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

RS Stock No.:: 259-1535
Mfr. Part No.:: IKW50N65H5FKSA1
Brand:: Infineon

Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

Available to back order for despatch 25/07/2024

Price Each (In a Pack of 2)

£4.16

(exc. VAT)

£4.99

(inc. VAT)

Units	Per unit	Per Pack*
2 - 8	£4.16	£8.32
10 - 18	£3.785	£7.57
20 - 48	£3.535	£7.07
50 - 98	£3.285	£6.57
100 +	£3.035	£6.07

*price indicative

RS Stock No.:: 259-1535
Mfr. Part No.:: IKW50N65H5FKSA1
Brand:: Infineon

Technical Reference

Datasheet - IKW50N65H5FKSA1

Legislation and Compliance

Product Details

The Infineon high speed IGBT5 is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	305 W
Package Type	PG-TO247-3