Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3

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Subtotal 10 units (supplied in a tube)*

£29.55

(exc. VAT)

£35.46

(inc. VAT)

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10 - 18£2.955
20 - 48£2.79
50 - 98£2.585
100 +£2.385

*price indicative

Packaging Options:
RS Stock No.:
259-1533P
Mfr. Part No.:
IKW50N65F5FKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

305 W

Package Type

PG-TO247-3

The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa