Bourns IGBT, 100 A 650 V TO-247
- RS Stock No.:
- 253-3509P
- Mfr. Part No.:
- BIDW50N65T
- Brand:
- Bourns
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
£42.55
(exc. VAT)
£51.06
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 1,098 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 48 | £4.255 |
| 50 - 98 | £4.02 |
| 100 - 248 | £3.505 |
| 250 + | £3.465 |
*price indicative
- RS Stock No.:
- 253-3509P
- Mfr. Part No.:
- BIDW50N65T
- Brand:
- Bourns
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Gate-Emitter Voltage VGE ) | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Gate-Emitter Voltage VGE ) | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant