Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- RS Stock No.:
- 253-3506
- Mfr. Part No.:
- BIDW30N60T
- Brand:
- Bourns
1200 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 600)
£1.87
(exc. VAT)
£2.24
(inc. VAT)
| Units | Per unit | Per Tube* |
| 600 + | £1.87 | £1,122.00 |
| *price indicative | ||
- RS Stock No.:
- 253-3506
- Mfr. Part No.:
- BIDW30N60T
- Brand:
- Bourns
Technical Reference
Legislation and Compliance
Product Details
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 230 W |
| Configuration | Single Diode |
| Package Type | TO-247 |
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