Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- RS Stock No.:
- 253-3500P
- Mfr. Part No.:
- BIDD05N60T
- Brand:
- Bourns
Subtotal 5 units (supplied on a continuous strip)*
£5.76
(exc. VAT)
£6.91
(inc. VAT)
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In Stock
- 2,430 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £1.152 |
*price indicative
- RS Stock No.:
- 253-3500P
- Mfr. Part No.:
- BIDD05N60T
- Brand:
- Bourns
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current | 5 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 82 W | |
| Package Type | TO-252 | |
| Configuration | Single Diode | |
Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 5 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 82 W | ||
Package Type TO-252 | ||
Configuration Single Diode | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant