Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS
- RS Stock No.:
- 248-6657
- Mfr. Part No.:
- AIKQ200N75CP2XKSA1
- Brand:
- Infineon
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£16.50
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£19.80
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Units | Per unit |
---|---|
1 - 4 | £16.50 |
5 - 9 | £15.68 |
10 - 24 | £15.02 |
25 - 49 | £14.36 |
50 + | £13.37 |
*price indicative
- RS Stock No.:
- 248-6657
- Mfr. Part No.:
- AIKQ200N75CP2XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 200 A | |
Maximum Collector Emitter Voltage | 750 V | |
Maximum Gate Emitter Voltage | 15V | |
Maximum Power Dissipation | 1.07 kW | |
Number of Transistors | 3 | |
Package Type | TO247PLUS | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 750 V | ||
Maximum Gate Emitter Voltage 15V | ||
Maximum Power Dissipation 1.07 kW | ||
Number of Transistors 3 | ||
Package Type TO247PLUS | ||
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Self limiting current under short circuit condition
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability
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