onsemi NXH450B100H4Q2F2SG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
- RS Stock No.:
- 245-6989P
- Mfr. Part No.:
- NXH450B100H4Q2F2SG
- Brand:
- onsemi
Subtotal 1 unit (supplied in a tray)*
£95.34
(exc. VAT)
£114.41
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 36 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 1 + | £95.34 |
*price indicative
- RS Stock No.:
- 245-6989P
- Mfr. Part No.:
- NXH450B100H4Q2F2SG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 101 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 79 W | |
| Package Type | Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins) | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 101 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 79 W | ||
Package Type Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins) | ||
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant