Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

Bulk discount available

Subtotal (1 unit)*

£96.76

(exc. VAT)

£116.11

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
1 - 1£96.76
2 - 4£94.82
5 +£85.34

*price indicative

Packaging Options:
RS Stock No.:
244-5835
Mfr. Part No.:
FP50R12KE3BOSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

280W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

FP50R12KE3

Standards/Approvals

No

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Collector-emitter saturation voltage 2.30 V

Gate-emitter leakage current 400 nA

Related links