Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

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£96.76

(exc. VAT)

£116.11

(inc. VAT)

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Packaging Options:
RS Stock No.:
244-5835
Mfr. Part No.:
FP50R12KE3BOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

280 W

Number of Transistors

7

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA

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