Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130
- RS Stock No.:
- 236-5199P
- Mfr. Part No.:
- FZ825R33HE4DBPSA1
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tray)*
£940.85
(exc. VAT)
£1,129.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3 unit(s) ready to ship
- Plus 2 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £940.85 |
*price indicative
- RS Stock No.:
- 236-5199P
- Mfr. Part No.:
- FZ825R33HE4DBPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 825 A | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Maximum Power Dissipation | 2400 kW | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 825 A | ||
Maximum Collector Emitter Voltage 3300 V | ||
Maximum Power Dissipation 2400 kW | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density
IC nom is 825 A
ICRM is 1650 A
It retains high current density
