Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.

• Reverse-conducting capability for enhanced performance
• Monolithic body diode reduces forward voltage loss
• Tight parameter distribution enhances reliability
• High ruggedness improves durability in demanding conditions
• Low EMI emissions ensure minimal interference in circuits

• Used for induction cooking
• Suitable for microwave oven circuitry
• Ideal for various high voltage switching
• Compatible with specialised semiconductor power modules

The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.

It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.

With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.