Infineon, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

Bulk discount available
View bulk pricing options

Subtotal 10 units (supplied in a tube)*

£25.76

(exc. VAT)

£30.91

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 35 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
10 - 20£2.576
25 - 45£2.402
50 - 120£2.23
125 +£2.06

*price indicative

Packaging Options:
RS Stock No.:
215-6673P
Mfr. Part No.:
IKW30N65H5XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

55A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Height

5.21mm

Series

High Speed Fifth Generation

Length

42mm

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy