Infineon, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6670P
- Mfr. Part No.:
- IKW20N60TFKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied in a tube)*
£56.95
(exc. VAT)
£68.35
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 215 unit(s) shipping from 01 June 2026
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Units | Per unit |
|---|---|
| 25 - 45 | £2.278 |
| 50 - 120 | £2.126 |
| 125 - 245 | £1.974 |
| 250 + | £1.822 |
*price indicative
- RS Stock No.:
- 215-6670P
- Mfr. Part No.:
- IKW20N60TFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 41A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.42mm | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 41A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 41.42mm | ||
Height 5.21mm | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon low loss duopack insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference