Infineon, Type N-Channel IGBT Single Transistor IC, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6668P
- Mfr. Part No.:
- IKW15N120BH6XKSA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal 20 units (supplied in a tube)*
£44.40
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£53.20
(inc. VAT)
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Limited stock
- 236 left, ready to ship
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Units | Per unit |
|---|---|
| 20 - 48 | £2.22 |
| 50 - 98 | £2.085 |
| 100 - 198 | £1.94 |
| 200 + | £1.805 |
*price indicative
- RS Stock No.:
- 215-6668P
- Mfr. Part No.:
- IKW15N120BH6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 200W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 42mm | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 200W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 42mm | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon sixth generation insulated-gate bipolar transistor of high speed soft switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference