Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 215-6662
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£87.50
(exc. VAT)
£105.00
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.75 | £87.50 |
| 100 - 200 | £1.698 | £84.90 |
| 250 + | £1.628 | £81.40 |
*price indicative
- RS Stock No.:
- 215-6662
- Mfr. Part No.:
- IKP40N65H5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT in TRENCHSTOP TM 5 Technology | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT in TRENCHSTOP TM 5 Technology | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference