Infineon IKD15N60RATMA1 IGBT, 30 A 600 V, 3-Pin PG-TO252-3
- RS Stock No.:
- 215-6657P
- Mfr. Part No.:
- IKD15N60RATMA1
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£2.28
(exc. VAT)
£2.735
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,360 unit(s) ready to ship
- Plus 2,500 unit(s) shipping from 25 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £0.456 |
*price indicative
- RS Stock No.:
- 215-6657P
- Mfr. Part No.:
- IKD15N60RATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO252-3 | |
| Pin Count | 3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO252-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference