Infineon IHW40N120R5XKSA1, Type N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6641
- Distrelec Article No.:
- 304-31-141
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.96
(exc. VAT)
£7.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,120 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.98 | £5.96 |
| 20 - 48 | £2.685 | £5.37 |
| 50 - 98 | £2.505 | £5.01 |
| 100 - 198 | £2.33 | £4.66 |
| 200 + | £2.14 | £4.28 |
*price indicative
- RS Stock No.:
- 215-6641
- Distrelec Article No.:
- 304-31-141
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | Resonant Switching | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | |
| Series | IHW40N120R5 | |
| Height | 5.21mm | |
| Length | 42mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type Resonant Switching | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | ||
Series IHW40N120R5 | ||
Height 5.21mm | ||
Length 42mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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