Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.40
(exc. VAT)
£13.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 255 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.28 | £11.40 |
| 25 - 45 | £2.03 | £10.15 |
| 50 - 120 | £1.916 | £9.58 |
| 125 - 245 | £1.778 | £8.89 |
| 250 + | £1.642 | £8.21 |
*price indicative
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 176 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 176 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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