Infineon IGW30N65L5XKSA1, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

£14.35

(exc. VAT)

£17.20

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20£2.87£14.35
25 - 45£2.354£11.77
50 - 120£2.182£10.91
125 - 245£2.038£10.19
250 +£1.894£9.47

*price indicative

Packaging Options:
RS Stock No.:
215-6634
Mfr. Part No.:
IGW30N65L5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

85A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Series

LowVCE(sat) Fifth Generation

Standards/Approvals

Pb-free lead plating, RoHS, JEDEC

Automotive Standard

No

The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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