STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP
- RS Stock No.:
- 204-9872P
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied in a tube)*
£14.04
(exc. VAT)
£16.85
(inc. VAT)
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In Stock
- 140 unit(s) ready to ship
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| Units | Per unit | 
|---|---|
| 10 - 20 | £1.404 | 
| 25 + | £1.378 | 
*price indicative
- RS Stock No.:
- 204-9872P
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
| Select all | Attribute | Value | 
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 45 W | |
| Package Type | TO-220FP | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
| Brand STMicroelectronics | ||
| Maximum Continuous Collector Current 40 A | ||
| Maximum Collector Emitter Voltage 650 V | ||
| Maximum Gate Emitter Voltage ±20V | ||
| Number of Transistors 1 | ||
| Maximum Power Dissipation 45 W | ||
| Package Type TO-220FP | ||
| Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
