STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

View all IGBTs

Subtotal 5 units (supplied in a tube)*

£12.12

(exc. VAT)

£14.545

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 580 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
5 +£2.424

*price indicative

Packaging Options:
RS Stock No.:
204-3944P
Mfr. Part No.:
STGWA50HP65FB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

272 W

Number of Transistors

1

Package Type

TO-247

Channel Type

N

Pin Count

3

Transistor Configuration

Single

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient