onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

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Packaging Options:
RS Stock No.:
195-8777
Mfr. Part No.:
NXH80T120L2Q0P2TG
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Package Type

Q0Pack

Mounting Type

Surface Mount

Channel Type

N

Pin Count

20

Dimensions

70.1 x 32.7 x 12.33mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

The NXH80T120L2Q0 is power integrated module containing a T-type neutral point clamped (NPC) three level inverter consisting of two 80 A/1200 V half-bridge IGBTs with 40 A/1200 V half-bridge diodes and two 50 A/600 V NPC IGBTs with two 50 A/600 V NPC diodes. The modules also contain an on−board thermistor

High speed 1200V and 650V IGBTs with low VCESAT
Improved efficiency
Options with pre-applied thermal interface material (TIM) and without pre-applied TIM
Simpler mounting process
Options with press-fit pins and solder pins
Wider choices for module mounting process
Applications
Solar Inverters
UPS inverters

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