Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	158 W
	Package Type	Q0Pack
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	20
	Dimensions	70.1 x 32.7 x 12.33mm
	Minimum Operating Temperature	-40 °C
	Maximum Operating Temperature	+150 °C

	Select all
	Brand ON Semiconductor
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 158 W
	Package Type Q0Pack
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 20
	Dimensions 70.1 x 32.7 x 12.33mm
	Minimum Operating Temperature -40 °C
	Maximum Operating Temperature +150 °C

Datasheet NXH80T120L2Q0P2TG

The NXH80T120L2Q0 is power integrated module containing a T-type neutral point clamped (NPC) three level inverter consisting of two 80 A/1200 V half-bridge IGBTs with 40 A/1200 V half-bridge diodes and two 50 A/600 V NPC IGBTs with two 50 A/600 V NPC diodes. The modules also contain an on−board thermistor

High speed 1200V and 650V IGBTs with low VCESAT
Improved efficiency
Options with pre-applied thermal interface material (TIM) and without pre-applied TIM
Simpler mounting process
Options with press-fit pins and solder pins
Wider choices for module mounting process
Applications
Solar Inverters
UPS inverters

onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount