Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	120 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±25V
	Number of Transistors	1
	Maximum Power Dissipation	517 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.87 x 4.82 x 20.82mm
	Gate Capacitance	7147pF
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 120 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±25V
	Number of Transistors 1
	Maximum Power Dissipation 517 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.87 x 4.82 x 20.82mm
	Gate Capacitance 7147pF
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C

Datasheet FGY60T120SQDN

Non Compliant

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
EV charging station
End Products
Industrial

onsemi FGY60T120SQDN IGBT, 120 A 1200 V, 3-Pin TO-247, Through Hole