DiodesZetex DGTD65T60S2PT IGBT, 100 A, 180 (Pulsed) A 650 V, 3-Pin TO-247, Through Hole

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RS Stock No.:
182-6874
Mfr. Part No.:
DGTD65T60S2PT
Brand:
DiodesZetex
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Brand

DiodesZetex

Maximum Continuous Collector Current

100 A, 180 (Pulsed) A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

428 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.31 x 21.46mm

Gate Capacitance

2327pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN
The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

High Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 60A
High Input Impedance
trr = 110ns (typ) @ diF/dt = 500A/μs
Eoff = 0.53mJ @ TC=25°C
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
UPS
Welder
Solar Inverter
IH Cooker

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