DiodesZetex DGTD65T50S1PT IGBT, 100 A, 200 (Pulsed) A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 182-6873
- Mfr. Part No.:
- DGTD65T50S1PT
- Brand:
- DiodesZetex
Discontinued
- RS Stock No.:
- 182-6873
- Mfr. Part No.:
- DGTD65T50S1PT
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Maximum Continuous Collector Current | 100 A, 200 (Pulsed) A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 375 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.31 x 21.46mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 4453pF | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Maximum Continuous Collector Current 100 A, 200 (Pulsed) A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 375 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.31 x 21.46mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 4453pF | ||
- COO (Country of Origin):
- CN
The DGTD65T50S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance.
High-Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 50A
High Input Impedance
trr = 80ns (typ) @ diF/dt = 1000A/μs
Eoff = 0.55mJ @ TC=25°C
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. Green Device
Applications
UPS
Welder
Solar Inverter
IH Cooker
VCE(sat) = 1.85V @ IC = 50A
High Input Impedance
trr = 80ns (typ) @ diF/dt = 1000A/μs
Eoff = 0.55mJ @ TC=25°C
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. Green Device
Applications
UPS
Welder
Solar Inverter
IH Cooker
