Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	75A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	455W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	4
	Switching Speed	1MHz
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	Field Stop 3rd generation
	Energy Rating	160mJ
	Automotive Standard	No

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 75A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 455W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 4
	Switching Speed 1MHz
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series Field Stop 3rd generation
	Energy Rating 160mJ
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A

100% of the Parts Tested for ILM(1)

High Input Impedance

Fast Switching

Tighten Parameter Distribution

onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

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