Name: onsemi FGH75T65SQDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
Brand: ON Semiconductor
SKU: 181-1865
Price: 2.54 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Maximum Continuous Collector Current	150 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	375 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	P
	Pin Count	4
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	15.8 x 5.2 x 22.74mm
	Maximum Operating Temperature	+175 °C
	Energy Rating	160mJ
	Minimum Operating Temperature	-55 °C
	Gate Capacitance	4845pF

	Select all
	Brand ON Semiconductor
	Maximum Continuous Collector Current 150 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 375 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type P
	Pin Count 4
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 15.8 x 5.2 x 22.74mm
	Maximum Operating Temperature +175 °C
	Energy Rating 160mJ
	Minimum Operating Temperature -55 °C
	Gate Capacitance 4845pF

Datasheet

COO (Country of Origin):: CN

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential

Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution