Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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RS Stock No.:
170-2259
Mfr. Part No.:
IHW40N120R3FKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

429 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Energy Rating

2.02mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Infineon IGBT


The Infineon IGBT is a 3-pin N-channel TO-247 through-hole mount transistor. It has a current rating of 80A and a voltage rating of 1200V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.

Features and Benefits


• Best-in-class conduction properties in V CE (sat) and V f
• Cost efficient
• Excellent thermal performance
• High efficiency
• High reliability against peak currents
• Low EMI filtering requirements
• Low switching losses
• Maximum power dissipation is 429W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• T j (max) is 175°C

Applications


• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007