STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
170-2164
Mfr. Part No.:
STGY50NC60WD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

110 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

278 W

Package Type

Max247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.