IXYS, Type N-Channel high Speed IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 168-4777
- Mfr. Part No.:
- IXYH20N120C3
- Brand:
- IXYS
Subtotal (1 tube of 30 units)*
£106.32
(exc. VAT)
£127.59
(inc. VAT)
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In Stock
- 330 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £3.544 | £106.32 |
*price indicative
- RS Stock No.:
- 168-4777
- Mfr. Part No.:
- IXYH20N120C3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 278W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.4V | |
| Maximum Operating Temperature | 175°C | |
| Series | 1200V XPTTM GenX3TM IGBTs | |
| Standards/Approvals | RoHS | |
| Energy Rating | 400mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 278W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.4V | ||
Maximum Operating Temperature 175°C | ||
Series 1200V XPTTM GenX3TM IGBTs | ||
Standards/Approvals RoHS | ||
Energy Rating 400mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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