Fuji Electric 7MBR75VB-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, Through Hole
- RS Stock No.:
- 168-4562
- Mfr. Part No.:
- 7MBR75VB-120-50
- Brand:
- Fuji Electric
Discontinued
- RS Stock No.:
- 168-4562
- Mfr. Part No.:
- 7MBR75VB-120-50
- Brand:
- Fuji Electric
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji Electric | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 385 W | |
| Package Type | M712 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 24 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Fuji Electric | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 385 W | ||
Package Type M712 | ||
Configuration 3 Phase Bridge | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 24 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- JP
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.