onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 166-3300
- Mfr. Part No.:
- FGH30S130P
- Brand:
- onsemi
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 166-3300
- Mfr. Part No.:
- FGH30S130P
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 1300 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 500 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 1300 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 500 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
The ON Semiconductor FGH30S130P is a 1300V, 30A IGBT featuring shorted-anode and field stop trench technologies. Soft switching applications are ideal for the FGH30S130P, with efficient conduction and high switching performance characteristics. The FGH30S130P IGBT can work in a parallel configuration and offers great avalanche capabilities.
The FGH30S130P IGBT is designed for use in induction heating, microwave ovens and other household appliances.
The FGH30S130P IGBT is designed for use in induction heating, microwave ovens and other household appliances.
• TO-247 package
• High speed switching
• Superior conduction
• Low saturation voltage
• High input impedance
• High speed switching
• Superior conduction
• Low saturation voltage
• High input impedance
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.