Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

This IGBT module is engineered to enhance performance in various industrial applications. With dimensions of 106.4 x 61.4 x 30.9 mm, it combines high efficiency with robust specifications, offering a maximum continuous collector current of 580A and a collector-emitter voltage rating of 1200V. Its design allows for effective integration into power electronic circuits, making it an ideal choice for those requiring reliable modular IGBT solutions.

• Maximum gate-emitter voltage of ±20V provides operational flexibility
• High power dissipation capability of 2kW supports demanding requirements
• Designed for panel mounting, ensuring easy installation in various environments
• Series configuration optimises space and operational efficiency

• Utilised in inverter circuits for industrial machinery
• Optimised for renewable energy systems, such as solar inverters
• Effective in electric vehicles and propulsion systems
• Used in heavy-duty automation equipment where high current is vital

The thermal resistance from junction to case is 0.062 K/W, and from case to heatsink is 0.031 K/W, ensuring effective heat dissipation during operation.

With a maximum operating temperature of +125°C and a minimum of -40°C, it is suitable for diverse environmental conditions and demanding applications.

A maximum continuous collector current rating of 580A means this IGBT module can handle significant power loads, making it ideal for high current IGBT applications in industrial settings.

Yes, the low gate capacitance of 28nF and specified gate drive capabilities enable efficient fast switching, increasing the performance of power electronic components in circuits.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.