Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount
- RS Stock No.:
- 166-0844
- Mfr. Part No.:
- FS50R12KE3BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 10 units)*
£770.90
(exc. VAT)
£925.10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 10 | £77.09 | £770.90 |
| 20 + | £73.236 | £732.36 |
*price indicative
- RS Stock No.:
- 166-0844
- Mfr. Part No.:
- FS50R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 270 W | |
| Package Type | AG-ECONO2-6 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 93 x 45 x 17mm | |
| Maximum Operating Temperature | +125 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 270 W | ||
Package Type AG-ECONO2-6 | ||
Configuration 3 Phase Bridge | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Transistor Configuration 3 Phase | ||
Dimensions 93 x 45 x 17mm | ||
Maximum Operating Temperature +125 °C | ||
Minimum Operating Temperature -40 °C | ||
RoHS Status: Exempt