STMicroelectronics STGB20N40LZ IGBT, 25 A 425 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 165-6551
- Mfr. Part No.:
- STGB20N40LZ
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
£973.00
(exc. VAT)
£1,168.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £0.973 | £973.00 |
*price indicative
- RS Stock No.:
- 165-6551
- Mfr. Part No.:
- STGB20N40LZ
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 25 A | |
Maximum Collector Emitter Voltage | 425 V | |
Maximum Gate Emitter Voltage | 16V | |
Maximum Power Dissipation | 150 W | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 10.4 x 9.35 x 4.6mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 425 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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