Infineon FP15R12W1T4B3BOMA1 Common Collector IGBT Module, 28 A 1200 V, 23-Pin EASY1B, PCB Mount

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Subtotal (1 tray of 24 units)*

£690.96

(exc. VAT)

£829.20

(inc. VAT)

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Units
Per unit
Per Tray*
24 - 24£28.79£690.96
48 +£27.35£656.40

*price indicative

RS Stock No.:
165-5899
Mfr. Part No.:
FP15R12W1T4B3BOMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

28 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Configuration

Common Collector

Package Type

EASY1B

Mounting Type

PCB Mount

Channel Type

N

Pin Count

23

Switching Speed

1MHz

Transistor Configuration

3 Phase

Dimensions

48 x 33.8 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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