STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole

Unavailable
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RS Stock No.:
165-3261
Mfr. Part No.:
STGWT15H60F
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

30 A @ +25°C

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

115 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Gate Capacitance

1952pF

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Energy Rating

553mJ

Based on trench field-stop (TFS) technology, the 600 V IGBT H series features a very low saturation voltage (down to 1.5 V) with minimal collector current turn-off tail and a maximum operating junction temperature of 175 °C, enhancing the efficiency of medium-frequency home appliance applications. Tight control cover parameters combined with a VCE(sat) showing a positive temperature coefficient enables safe paralleling of multiple IGBTs for higher power requirements and design simplification.

Medium-speed IGBT series optimized for home appliance applications (8 to 30 kHz)
High robustness and reliability thanks to an extended max operating TJ of 175 °C and 600 V breakdown voltage
Very low saturation voltage (down to 1.5 V) for increased efficiency
Positive temperature coefficient for safe paralleling of multiple IGBTs
Optimized diode for target applications (low EMI and fast recovery time)

High speed switching
Tight parameter distribution
Safe paralleling
Low thermal resistance