STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole
- RS Stock No.:
- 165-3232
- Mfr. Part No.:
- STGW8M120DF3
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-3232
- Mfr. Part No.:
- STGW8M120DF3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 16 A @ +25°C | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 167 W | |
| Number of Transistors | 1 | |
| Package Type | TO | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Energy Rating | 1.24mJ | |
| Gate Capacitance | 542pF | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 16 A @ +25°C | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 167 W | ||
Number of Transistors 1 | ||
Package Type TO | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 1.24mJ | ||
Gate Capacitance 542pF | ||
Maximum Operating Temperature +175 °C | ||
Based on trench-field stop (TFS) technology, the 1200 V IGBT M series is designed for applications working at a switching frequency between 2 and 20 kHz. With highly optimized conduction and turn-off characteristics, as well as turn-on losses, these IGBTs are ideal for use in hard-switching circuits in applications such as solar inverters, welding equipment, UPS and industrial motor drives.
Low loss IGBT series for applications up to 20 kHz
High robustness and reliability thanks to 1200 V breakdown voltage
Thin IGBT die for increased thermal resistance
Positive VCE(sat) temperature coefficient, with tight parameter distribution
Optimized diode for fast recovery
High robustness and reliability thanks to 1200 V breakdown voltage
Thin IGBT die for increased thermal resistance
Positive VCE(sat) temperature coefficient, with tight parameter distribution
Optimized diode for fast recovery
11 μs of short-circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode