STMicroelectronics STGB20N45LZAG IGBT, 25 A 475 V, 3-Pin D2PAK, Surface Mount
- RS Stock No.:
- 164-7013P
- Mfr. Part No.:
- STGB20N45LZAG
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£10.84
(exc. VAT)
£13.01
(inc. VAT)
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In Stock
- Plus 895 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 5 + | £2.168 |
*price indicative
- RS Stock No.:
- 164-7013P
- Mfr. Part No.:
- STGB20N45LZAG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 150 W | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Gate Capacitance | 1011pF | |
| Energy Rating | 300mJ | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.35mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Gate Capacitance 1011pF | ||
Energy Rating 300mJ | ||
Maximum Operating Temperature +175 °C | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor