STMicroelectronics STGB25N40LZAG IGBT, 25 A 435 V, 3-Pin D2PAK, Surface Mount
- RS Stock No.:
- 164-6957
- Mfr. Part No.:
- STGB25N40LZAG
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 164-6957
- Mfr. Part No.:
- STGB25N40LZAG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 435 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 150 W | |
| Number of Transistors | 1 | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.35mm | |
| Automotive Standard | AEC-Q101 | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1011pF | |
| Minimum Operating Temperature | -55 °C | |
| Energy Rating | 320mJ | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 435 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 150 W | ||
Number of Transistors 1 | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.35mm | ||
Automotive Standard AEC-Q101 | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1011pF | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 320mJ | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 320 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor