Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole

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Packaging Options:
RS Stock No.:
162-3336
Mfr. Part No.:
IKZ75N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.3 x 5.21 x 21.1mm

Energy Rating

1.11mJ

Maximum Operating Temperature

+175 °C

Gate Capacitance

4300pF

Minimum Operating Temperature

-40 °C

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Extremely low control inductance loop
Emitter pin for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
20% reduction in total switching losses compared to TO-247 package using same technology
System efficiency improvement compared to standard TO-247
Benefit increase at high current conditions
IGBTs operates under lower junction temperature
Much less power dissipation under overcurrent conditions