Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
162-3334
Mfr. Part No.:
IKZ75N65ES5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

395 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Energy Rating

2.8mJ

Gate Capacitance

4500pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Very low control inductance loop
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3