Infineon IKZ50N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

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Packaging Options:
RS Stock No.:
162-3332
Mfr. Part No.:
IKZ50N65ES5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

274 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3100pF

Energy Rating

1.65mJ

Maximum Operating Temperature

+175 °C

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Very low control inductance loop
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3