Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

View all IGBTs
Unavailable
RS will no longer stock this product.
RS Stock No.:
162-3290
Mfr. Part No.:
IKZ75N65ES5XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

395 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Gate Capacitance

4500pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Energy Rating

2.8mJ

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Very low control inductance loop
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3