Infineon IKW30N60DTPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole

View all IGBTs

Subtotal (1 pack of 10 units)*

£19.60

(exc. VAT)

£23.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 210 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +£1.96£19.60

*price indicative

RS Stock No.:
144-1205
Mfr. Part No.:
IKW30N60DTPXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

53 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

200 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Energy Rating

1.13mJ

Gate Capacitance

1050pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links