onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 134-9506
- Mfr. Part No.:
- NGTB40N120S3WG
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 134-9506
- Mfr. Part No.:
- NGTB40N120S3WG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 160 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 454 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Common Emitter | |
| Dimensions | 16.25 x 5.3 x 21.34mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 4912pF | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 160 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 454 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Common Emitter | ||
Dimensions 16.25 x 5.3 x 21.34mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 4912pF | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.