Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 133-9879
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£3.73
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£4.48
(inc. VAT)
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1 + | £3.73 |
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- RS Stock No.:
- 133-9879
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 80 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 274 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 30kHz | |
Transistor Configuration | Single | |
Dimensions | 16.13 x 5.21 x 21.1mm | |
Gate Capacitance | 3100pF | |
Energy Rating | 1.78mJ | |
Minimum Operating Temperature | -40 °C | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 274 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 3100pF | ||
Energy Rating 1.78mJ | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
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