Infineon IKW50N65H5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7771
- Mfr. Part No.:
- IKW50N65H5FKSA1
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£6.46
(exc. VAT)
£7.752
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 4 + | £1.615 | £6.46 |
*price indicative
- RS Stock No.:
- 110-7771
- Mfr. Part No.:
- IKW50N65H5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Priced to Clear | Yes | |
| Energy Rating | 0.7mJ | |
| Gate Capacitance | 3000pF | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Minimum Operating Temperature -40 °C | ||
Priced to Clear Yes | ||
Energy Rating 0.7mJ | ||
Gate Capacitance 3000pF | ||
Maximum Operating Temperature +175 °C | ||